KC817W-25 Datasheet, Equivalent, Cross Reference Search
Type Designator: KC817W-25
SMD Transistor Code: 6B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT323
KC817W-25 Transistor Equivalent Substitute - Cross-Reference Search
KC817W-25 Datasheet (PDF)
kc817w.pdf
SMD Type TransistorsNPN TransistorsBC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt
kc817.pdf
SMD Type TransistorsNPN TransistorsBC817 HF (KC817 HF)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 For general AF applications Low collector-emitter saturation voltage Complementary types: BC807 HF ( PNP )1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
kc817a.pdf
SMD Type TransistorsNPN TransistorsBC817A (KC817A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3For general AF applications.High collector current.1 2High current gain.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Low collector-emitter saturation voltage.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
