All Transistors. KNLS350E Datasheet

 

KNLS350E Datasheet and Replacement


   Type Designator: KNLS350E
   SMD Transistor Code: N35
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT223
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KNLS350E Datasheet (PDF)

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KNLS350E

SMD Type TransistorsNPN TransistorsDNLS350E (KNLS350E)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to DPLS350E Lead Free By Design/RoHS Compliant1 2 3 "Green" Device0.2502.30 (typ)Gauge PlaneCOLLECTOR1.Base 2.CollectorBASE0.700.13.Emitter4.60 (

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT2P01M | BC806-25 | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | MP2526

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