KNLS350E Specs and Replacement
Type Designator: KNLS350E
SMD Transistor Code: N35
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT223
KNLS350E Substitution
- BJT ⓘ Cross-Reference Search
KNLS350E datasheet
SMD Type Transistors NPN Transistors DNLS350E (KNLS350E) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to DPLS350E Lead Free By Design/RoHS Compliant 1 2 3 "Green" Device 0.250 2.30 (typ) Gauge Plane COLLECTOR 1.Base 2.Collector BASE 0.70 0.1 3.Emitter 4.60 (... See More ⇒
Detailed specifications: KC848, KC848A, KC848B, KC848C, KC848AW, KC848BW, KC848CW, KN1A01FU, 2SC4793, KPLS350E, KRA109M, KRA112M, KRA157F, KRA302VS, KMS3, KMS4, KMST2222A
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