KPLS350E Specs and Replacement
Type Designator: KPLS350E
SMD Transistor Code: P35
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT223
KPLS350E Substitution
- BJT ⓘ Cross-Reference Search
KPLS350E datasheet
SMD Type Transistors PNP Transistors DPLS350E (KPLS350E) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V Complementary to DNLS350E 1 2 3 COLLECTOR 2,4 0.250 2.30 (typ) Gauge Plane 1.Base 1 2.Collector BASE 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector 3 EMITTER Absolute Maxim... See More ⇒
Detailed specifications: KC848A, KC848B, KC848C, KC848AW, KC848BW, KC848CW, KN1A01FU, KNLS350E, MJE340, KRA109M, KRA112M, KRA157F, KRA302VS, KMS3, KMS4, KMST2222A, KMST2907A
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