KC860 Datasheet. Specs and Replacement
Type Designator: KC860 📄📄
SMD Transistor Code: 4F*_4G*
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 220
Package: SOT23
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KC860 Substitution
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KC860 datasheet
SMD Type Transistors PNP Transistors BC859 BC860 (KC859 KC860) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements BC849 and BC850. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec... See More ⇒
SMD Type Transistors PNP Transistors BC859W,BC860W (KC859W,KC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC849W and BC850W. C B 1.Base 2.Emitter E 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC859W -30 Collector - Base Voltage VCBO BC860W -50 BC859W -30 V Collector - Emitter Voltag... See More ⇒
Detailed specifications: KC857W, KC858, KC858A, KC858B, KC858C, KC858W, KC859, KC859W, TIP120, KC860W, RN1116F, RN1114FT, RN1115FT, KCP51, KCP52, KCP53, KCP53-16
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