KCP52 Specs and Replacement

Type Designator: KCP52

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: SOT223

 KCP52 Substitution

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KCP52 datasheet

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KCP52

SMD Type Transistors PNP Transistors BCP51,BCP52,BCP53 (KCP51,KCP52,KCP53) Unit mm SOT-223 6.50 0.2 Features 3.00 0.1 For AF driver and output stages 4 High collector current Low collector-emitter saturation voltage Complementary to BCP54,BCP55,BCP56 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collecto... See More ⇒

Detailed specifications: KC859, KC859W, KC860, KC860W, RN1116F, RN1114FT, RN1115FT, KCP51, BD222, KCP53, KCP53-16, KCP54, KCP55, KCP56, KCP56-16, KCP68, KCP69

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