All Transistors. 2N6655-2 Datasheet

 

2N6655-2 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6655-2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 2N6655-2 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6655-2 Datasheet (PDF)

 8.1. Size:11K  semelab
2n6655.pdf

2N6655-2

2N6655Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.1. Size:89K  vishay
2n6659-2.pdf

2N6655-2
2N6655-2

2N6659, 2N6659-2www.vishay.comVishay SiliconixN-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 35 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 1.8 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205ADBENEFITS(TO-39) Guarant

 9.2. Size:146K  mospec
2n6383-85 2n6648-49 2n6650.pdf

2N6655-2
2N6655-2

AAA

 9.3. Size:42K  no
2n6656-59 2n6660-61.pdf

2N6655-2

 9.4. Size:71K  semelab
2n6659x.pdf

2N6655-2
2N6655-2

N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25C Drain Current 1.4A ID TC = 100C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25C Power Dissipation 6.25W

 9.5. Size:11K  semelab
2n6653.pdf

2N6655-2

2N6653Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.6. Size:12K  semelab
2n6654.pdf

2N6655-2

2N6654Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 350V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.7. Size:18K  semelab
2n6659.pdf

2N6655-2
2N6655-2

2N6659MECHANICAL DATADimensions in mm (inches)NCHANNEL8.89 (0.35)ENHANCEMENT MODE9.40 (0.37)7.75 (0.305)8.51 (0.335)MOS TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.8.51 (0.335) Switching Regulatorsdia. Converters5.08 (0.200)typ. Motor Drivers2.542(0.100)1 30.66 (0.026)1.14 (0.045

 9.8. Size:147K  jmnic
2n6653.pdf

2N6655-2
2N6655-2

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

 9.9. Size:147K  jmnic
2n6654.pdf

2N6655-2
2N6655-2

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

 9.10. Size:186K  inchange semiconductor
2n6653.pdf

2N6655-2
2N6655-2

isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta

 9.11. Size:186K  inchange semiconductor
2n6654.pdf

2N6655-2
2N6655-2

isc Silicon NPN Power Transistor 2N6654DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta

Datasheet: 2N6653B , 2N6654 , 2N6654-1 , 2N6654-2 , 2N6654A , 2N6654B , 2N6655 , 2N6655-1 , BC557 , 2N6655A , 2N6655B , 2N6665 , 2N6666 , 2N6667 , 2N6668 , 2N6669 , 2N6670 .

 

 
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