CZT5551E Datasheet, Equivalent, Cross Reference Search
Type Designator: CZT5551E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 220 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT223
CZT5551E Transistor Equivalent Substitute - Cross-Reference Search
CZT5551E Datasheet (PDF)
czt5551e.pdf
CZT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES:SOT-223 CASESOT-223 CASE High Collector Breakdown Voltage
czt5551.pdf
CZT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCol
czt5551hc.pdf
CZT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASE
czt5551.pdf
CZT5551NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages.REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 5 5 1D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3
czt5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5551 TRANSISTOR (NPN) FEATURES High Voltage 1. BASE High Voltage Amplifier Application 2. COLLECTOR MARKING: 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBOV Collector-Emitter Volt
czt5551.pdf
SMD Type TransistorsNPN TransistorsCZT5551 (KZT5551)Unit:mmSOT-2236.500.23.000.14 Features High Voltage High Voltage Amplifier Application1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle
czt5551a czt5551n czt5551c.pdf
CZT5551NPN Transistor Epitaxial Planar TransistorSOT-223Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages.REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 o 5 1.40 1.80 MAXIMUM RATINGS* (Tam
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
