CZT7120 Specs and Replacement
Type Designator: CZT7120
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT223
CZT7120 Substitution
- BJT ⓘ Cross-Reference Search
CZT7120 datasheet
CZT7120 www.centralsemi.com SURFACE MOUNT PNP SILICON SWITCHING DESCRIPTION POWER TRANSISTOR The CENTRAL SEMICONDUCTOR CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switc... See More ⇒
Detailed specifications: CZT3120, CZT3150, CZT5401E, CZT5551E, CZT5551HC, CZT651, CZT7090L, CZT7090LE, BC556, CZT751, CPH5901, CPH5902, CPH5905, CS684, CSA1162, CSC2712, CXT3090L
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