CS684
Datasheet, Equivalent, Cross Reference Search
Type Designator: CS684
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 65
W
Maximum Collector-Base Voltage |Vcb|: 140
V
Maximum Collector-Emitter Voltage |Vce|: 140
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 0.06
MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package:
TO3
CS684
Transistor Equivalent Substitute - Cross-Reference Search
CS684
Datasheet (PDF)
..1. Size:68K comset
cs684.pdf 
CS684 TO3 PNP SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. CS684 is the BD684 in TO3 package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 140 V -VCBO Collector-Base Voltage 140 V -VE
0.1. Size:59K china
cs6849.pdf
CS6849P PD TC=25 25 W 0.2 W/ID VGS=-10V,TC=25 -6.5 AID VGS=-10V,TC=100 -4.1 AIDM -25 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 5.0 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-4.1A 0.45
0.2. Size:66K china
cs6849u.pdf
CS6849UP PD TC=25 25 W 0.20 W/ID VGS=-10V,TC=25 -6.5 AID VGS=-10V,TC=100 -4.1 AIDM -25 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 5.0 /W BVDSS VGS=0V,ID=-1.0mA -100 VRDS on VGS=-10V,ID=-4.1A 0.30
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