RN2609 Datasheet. Specs and Replacement

Type Designator: RN2609

SMD Transistor Code: YJ

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT26 SC74 SM6

 RN2609 Substitution

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RN2609 datasheet

 0.1. Size:145K  toshiba

 rn2607-rn2609.pdf pdf_icon

RN2609

RN2607 RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to ... See More ⇒

 9.1. Size:154K  toshiba

 rn2601-rn2606.pdf pdf_icon

RN2609

RN2601 RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces... See More ⇒

Detailed specifications: CXT491E, CXT5401E, CXT5551E, CXT5551HC, CXT591E, CXT7090L, CXT7410, CXT7820, BDT88, CTLM3410-M832D, CTLM3474-M832D, CTLM7410-M832D, CTLT3410-M621, CTLT5551-M832D, CTLT7410-M621, CTLT8099-M322S, CTLT853-M833

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