All Transistors. RN2609 Datasheet

 

RN2609 Transistor. Datasheet pdf. Equivalent

Type Designator: RN2609

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT26_SC74_SM6

RN2609 Transistor Equivalent Substitute - Cross-Reference Search

RN2609 Datasheet (PDF)

1.1. rn2607-rn2609.pdf Size:145K _toshiba

RN2609
RN2609

RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

5.1. rn2601-rn2606.pdf Size:154K _toshiba

RN2609
RN2609

RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Datasheet: CXT491E , CXT5401E , CXT5551E , CXT5551HC , CXT591E , CXT7090L , CXT7410 , CXT7820 , 2N3055 , CTLM3410-M832D , CTLM3474-M832D , CTLM7410-M832D , CTLT3410-M621 , CTLT5551-M832D , CTLT7410-M621 , CTLT8099-M322S , CTLT853-M833 .

 


RN2609
  RN2609
  RN2609
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RN2609
  RN2609
  RN2609
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