CZD13003 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZD13003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO252
CZD13003 Transistor Equivalent Substitute - Cross-Reference Search
CZD13003 Datasheet (PDF)
czd13003.pdf
CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size ACBDTO-252 2.5K 13 inch G EK H FNOPM J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma
czd1386.pdf
CZD1386 -5 A, -30 V PNP Epitaxial Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD1386 is designed for low frequency applications. FEATURES Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A) Excellent DC current gain characteristics PACKAGE DIMENSIONS Millimeter Millimeter REF. REF.Min. Max. Min. Max.A 6.40 6.80 G 0.50 0.70B 5.20 5.50 H 2.20 2.40
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
