All Transistors. CZT2000 Datasheet

 

CZT2000 Datasheet and Replacement


   Type Designator: CZT2000
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: SOT223
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CZT2000 Datasheet (PDF)

 ..1. Size:527K  central
 czt2000.pdf pdf_icon

CZT2000

CZT2000SURFACE MOUNTwww.centralsemi.comEXTREMELY HIGH VOLTAGEDESCRIPTION:NPN SILICONThe CENTRAL SEMICONDUCTOR CZT2000 type is DARLINGTON TRANSISTORan NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability.MARKING: FULL PART NUMBERSOT-2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | ESM259 | DTA123EET1G | ESM2060 | MP602 | MMSTA64 | GET538

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