CZT2000 Datasheet. Specs and Replacement

Type Designator: CZT2000

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: SOT223

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CZT2000 datasheet

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CZT2000

CZT2000 SURFACE MOUNT www.centralsemi.com EXTREMELY HIGH VOLTAGE DESCRIPTION NPN SILICON The CENTRAL SEMICONDUCTOR CZT2000 type is DARLINGTON TRANSISTOR an NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. MARKING FULL PART NUMBER SOT-2... See More ⇒

Detailed specifications: CV7342, CV7342A-0, CV7343A, CV7343A-O, CV7345A, CXTA62, CYT7090LD, CZD13003, B772, CZT2680, CZT3090L, CZT3090LE, CV7345A-O, CV7346A-O, CV7362, CV7366, CV7366A

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