CZT2000 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZT2000
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: SOT223
CZT2000 Transistor Equivalent Substitute - Cross-Reference Search
CZT2000 Datasheet (PDF)
..1. Size:527K central
czt2000.pdf
czt2000.pdf
CZT2000SURFACE MOUNTwww.centralsemi.comEXTREMELY HIGH VOLTAGEDESCRIPTION:NPN SILICONThe CENTRAL SEMICONDUCTOR CZT2000 type is DARLINGTON TRANSISTORan NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability.MARKING: FULL PART NUMBERSOT-2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
