2N6677 Datasheet. Specs and Replacement

Type Designator: 2N6677  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 550 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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2N6677 datasheet

 ..1. Size:131K  inchange semiconductor

2n6676 2n6677 2n6678.pdf pdf_icon

2N6677

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See F... See More ⇒

 9.1. Size:137K  mospec

2n6676-78.pdf pdf_icon

2N6677

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 9.2. Size:345K  no

2n6671.pdf pdf_icon

2N6677

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 9.3. Size:916K  no

2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf pdf_icon

2N6677

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2... See More ⇒

Detailed specifications: 2N6669, 2N6670, 2N6671, 2N6672, 2N6673, 2N6674, 2N6675, 2N6676, B772, 2N6678, 2N6686, 2N6687, 2N6688, 2N6689, 2N669, 2N6690, 2N6691

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