All Transistors. 2N6687 Datasheet

 

2N6687 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6687

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 280 V

Maximum Collector-Emitter Voltage |Vce|: 180 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

2N6687 Transistor Equivalent Substitute - Cross-Reference Search

 

2N6687 Datasheet (PDF)

1.1. 2n6687.pdf Size:11K _semelab

2N6687

2N6687 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 180V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.2. 2n6687.pdf Size:116K _inchange_semiconductor

2N6687
2N6687

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6687 DESCRIPTION Ў¤ With TO-3 package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж

5.1. 2n6686.pdf Size:11K _semelab

2N6687

2N6686 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 180V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.2. 2n6674 2n6675 2n6689 2n6690.pdf Size:60K _microsemi

2N6687
2N6687

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VEBO

5.3. 2n6688.pdf Size:116K _inchange_semiconductor

2N6687
2N6687

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6688 DESCRIPTION Ў¤ With TO-3 package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж

5.4. 2n6686.pdf Size:116K _inchange_semiconductor

2N6687
2N6687

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6686 DESCRIPTION Ў¤ With TO-3 package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж

Datasheet: 2N6672 , 2N6673 , 2N6674 , 2N6675 , 2N6676 , 2N6677 , 2N6678 , 2N6686 , 2N3773 , 2N6688 , 2N6689 , 2N669 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2N67 .

 


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