2N6687 Todos los transistores

 

2N6687 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6687
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 280 V
   Tensión colector-emisor (Vce): 180 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO3
 

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2N6687 Datasheet (PDF)

 ..1. Size:11K  semelab
2n6687.pdf pdf_icon

2N6687

2N6687Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 ..2. Size:116K  inchange semiconductor
2n6687.pdf pdf_icon

2N6687

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6687 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=

 9.1. Size:11K  semelab
2n6686.pdf pdf_icon

2N6687

2N6686Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:60K  microsemi
2n6674 2n6675 2n6689 2n6690.pdf pdf_icon

2N6687

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE

Otros transistores... 2N6672 , 2N6673 , 2N6674 , 2N6675 , 2N6676 , 2N6677 , 2N6678 , 2N6686 , 2SC1815 , 2N6688 , 2N6689 , 2N669 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2N67 .

History: BTB1184J3 | AC107M

 

 
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