2N6687
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6687
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 280
V
Tensión colector-emisor (Vce): 180
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 25
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N6687
2N6687
Datasheet (PDF)
..1. Size:11K semelab
2n6687.pdf
2N6687Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
..2. Size:116K inchange semiconductor
2n6687.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6687 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
9.1. Size:11K semelab
2n6686.pdf
2N6686Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.2. Size:60K microsemi
2n6674 2n6675 2n6689 2n6690.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE
9.3. Size:116K inchange semiconductor
2n6686.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6686 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
9.4. Size:116K inchange semiconductor
2n6688.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6688 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
Otros transistores... 2N6672
, 2N6673
, 2N6674
, 2N6675
, 2N6676
, 2N6677
, 2N6678
, 2N6686
, 2SD2499
, 2N6688
, 2N6689
, 2N669
, 2N6690
, 2N6691
, 2N6692
, 2N6693
, 2N67
.