All Transistors. BUR51S Datasheet

 

BUR51S Datasheet, Equivalent, Cross Reference Search

Type Designator: BUR51S

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 350 W

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 60 A

Transition Frequency (ft): 16 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

BUR51S Transistor Equivalent Substitute - Cross-Reference Search

 

BUR51S Datasheet (PDF)

1.1. bur51s.pdf Size:10K _update

BUR51S

BUR51S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max

5.1. bur51.pdf Size:65K _st

BUR51S
BUR51S

BUR51 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Co

5.2. bur51.pdf Size:213K _inchange_semiconductor

BUR51S
BUR51S

isc Silicon NPN Power Transistor BUR51 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 200V(Min) CEO(SUS) ·High Current Capability ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage ,high speed,power switching and linear in military and industrial equipment. ABSOLUTE MAXIMUM R

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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