BUR51S Datasheet, Equivalent, Cross Reference Search
Type Designator: BUR51S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 60 A
Transition Frequency (ft): 16 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUR51S Transistor Equivalent Substitute - Cross-Reference Search
BUR51S Datasheet (PDF)
bur51s.pdf
BUR51SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25)26.67 (1.05) 9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 23(case)3.84 (0.151)4.09 (0.161) 7.92 (0.312)12.70 (0.50)TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max
bur51.pdf
BUR51HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPNtransistor in modified Jedec TO-3 metal case,intented for use in switching and linearapplications in military and industrial equipment.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV
bur51.pdf
isc Silicon NPN Power Transistor BUR51DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Current CapabilityHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching andlinear in military and industrial equipment.ABSOLUTE MAXIMUM R
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
