BUP53R Datasheet. Specs and Replacement

Type Designator: BUP53R  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3B

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BUP53R datasheet

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BUP53R

BUP53R MECHANICAL DATA NPN MULTI-EPITAXIAL Dimensions in mm TRANSISTOR 25.4 FEATURES (1.0) 10.92 1.57 LOW VCE(SAT) (0.430) (0.062) FAST SWITCHING SINGLE CHIP COSNTRUCTION HIGH SWITCHING CURRENTS HIGH RELIABILITY 1 2 MILITARY OPTIONS AVAILABLE APPLICATIONS +0.4 4.1 0 4.0 0.1 +0.016 11.65 0.35 9.0 (0.161 0 ) (0.157 0.004) (0.459 ... See More ⇒

Detailed specifications: BUY80SMD, BUY82CECC, BUY82X, BUY92SMD, BUT11APX, BUR51S, BUR52S, BUP50A, BC337, BUW90, BUX50SMD, BUX50SMD05, BUX51SMD, BUX51SMD05, BUX52SMD, BUX52SMD05, BUX21A

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