2N669 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N669
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO3
2N669 Transistor Equivalent Substitute - Cross-Reference Search
2N669 Datasheet (PDF)
2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2
2n6674 2n6675 2n6689 2n6690.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE
2n6676 2n6678 2n6691 2n6693.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE
Datasheet: 2N6675 , 2N6676 , 2N6677 , 2N6678 , 2N6686 , 2N6687 , 2N6688 , 2N6689 , 9014 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2N67 , 2N670 , 2N6701 , 2N6702 .
