All Transistors. RN2973HFE Datasheet

 

RN2973HFE Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN2973HFE
   SMD Transistor Code: YY4
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT563 ES6

 RN2973HFE Transistor Equivalent Substitute - Cross-Reference Search

   

RN2973HFE Datasheet (PDF)

 ..1. Size:144K  toshiba
rn2972hfe rn2973hfe.pdf

RN2973HFE
RN2973HFE

RN2972HFE,RN2973HFE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2972HFE,RN2973HFE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduci

 8.1. Size:116K  toshiba
rn2972fs rn2973fs.pdf

RN2973HFE
RN2973HFE

RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2972FS,RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 Incorporating a bias resistor into a

 8.2. Size:139K  toshiba
rn2972ct rn2973ct.pdf

RN2973HFE
RN2973HFE

RN2972CT, RN2973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2972CT, RN2973CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6pin) package. Incorporating a bias resistor into a tra

 9.1. Size:112K  toshiba
rn2970-rn2971.pdf

RN2973HFE
RN2973HFE

RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

 9.2. Size:116K  toshiba
rn2970fs rn2971fs.pdf

RN2973HFE
RN2973HFE

RN2970FS,RN2971FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2970FS,RN2971FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Incorporating a bias resistor i

 9.3. Size:140K  toshiba
rn2970ct rn2971ct.pdf

RN2973HFE
RN2973HFE

RN2970CT,RN2971CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2970CT,RN2971CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a tran

 9.4. Size:120K  toshiba
rn2975.pdf

RN2973HFE
RN2973HFE

RN2975 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2975 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (6-pin) package Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enable

 9.5. Size:168K  toshiba
rn2970fe-rn2971fe.pdf

RN2973HFE
RN2973HFE

RN2970FE,RN2971FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2970FE,RN2971FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing t

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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