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BUX99 Specs and Replacement

Type Designator: BUX99

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 28 W

Maximum Collector-Base Voltage |Vcb|: 730 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO126

 BUX99 Substitution

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BUX99 datasheet

 ..1. Size:71K  njs

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BUX99

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 ..2. Size:100K  inchange semiconductor

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BUX99

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX99 DESCRIPTION High Collector Current-IC= 1.5A High Collector-Emitter Sustaining Voltage- VCEO(SUS)= 300V(Min) High Switching Speed APPLICATIONS Designed for use in fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltag... See More ⇒

Detailed specifications: BUX54SMD05 , BUX77ASMD , BUX77SMD , BUX78A , BUX78A-220M , BUX78ASMD , BUX78SMD , BUX85G , BD135 , 2DA1201Y , 2DA1213O , 2DA1213Y , 2DA1971 , 2DB1182Q , 2DI75D-050A , 2DI75D-100 , 2DI75M-120 .

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