All Transistors. BUX99 Datasheet

 

BUX99 Datasheet and Replacement


   Type Designator: BUX99
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 28 W
   Maximum Collector-Base Voltage |Vcb|: 730 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126
 

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BUX99 Datasheet (PDF)

 ..1. Size:71K  njs
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BUX99

 ..2. Size:100K  inchange semiconductor
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BUX99

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX99 DESCRIPTION High Collector Current-IC= 1.5A High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) High Switching Speed APPLICATIONS Designed for use in fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltag

Datasheet: BUX54SMD05 , BUX77ASMD , BUX77SMD , BUX78A , BUX78A-220M , BUX78ASMD , BUX78SMD , BUX85G , BD135 , 2DA1201Y , 2DA1213O , 2DA1213Y , 2DA1971 , 2DB1182Q , 2DI75D-050A , 2DI75D-100 , 2DI75M-120 .

History: BDW93C | GT402V | TPC6502 | BU6084BF | ZXTD09N50DE6

Keywords - BUX99 transistor datasheet

 BUX99 cross reference
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