2DB1182Q Specs and Replacement
Type Designator: 2DB1182Q
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO252
2DB1182Q Substitution
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2DB1182Q datasheet
2DB1182Q 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data Epitaxial Planar Die Construction Case TO252 Low Collector-Emitter Saturation Voltage Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification... See More ⇒
2DB1188P/Q/R PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (2DD1766) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data Case SOT89-3L ... See More ⇒
2db1188p 2db1188q 2db1188r.pdf 
2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -32V Case SOT89 IC = -2A high Continuous Current Case material Molded Plastic, "Green" Molding Compound. Low saturation voltage VCE(sat) ... See More ⇒
Detailed specifications: BUX78ASMD , BUX78SMD , BUX85G , BUX99 , 2DA1201Y , 2DA1213O , 2DA1213Y , 2DA1971 , 2SD313 , 2DI75D-050A , 2DI75D-100 , 2DI75M-120 , 2DI75Z-120 , 2DI100A-120 , 2DI100D-050 , 2DI100D-100 , 2DI100Z-100 .
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