2DI100Z-100 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI100Z-100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 800 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M210
2DI100Z-100 Transistor Equivalent Substitute - Cross-Reference Search
2DI100Z-100 Datasheet (PDF)
8.1. Size:408K fuji
2di100a-120.pdf
2di100a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI100A-120 (100A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANS
8.3. Size:348K fuji
2di100d-100.pdf
2di100d-100.pdf
FUJI POWER TRANSISTOR MODULE2DI100D-100 (100A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
