2DI100Z-100 Specs and Replacement
Type Designator: 2DI100Z-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 800 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M210
2DI100Z-100 Substitution
- BJT ⓘ Cross-Reference Search
2DI100Z-100 datasheet
FUJI POWER TRANSISTOR MODULE 2DI100A-120 (100A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANS... See More ⇒
Detailed specifications: 2DB1182Q , 2DI75D-050A , 2DI75D-100 , 2DI75M-120 , 2DI75Z-120 , 2DI100A-120 , 2DI100D-050 , 2DI100D-100 , 2SC945 , 2DI100Z-120 , 2DI150A-120 , 2DI150D-050 , 2DI150D-100 , 2DI150Z-100 , 2DI150Z-120 , 2DI200A-050 , 2DI200D-100 .
History: BUV74
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