2DI150Z-100 Datasheet. Specs and Replacement
Type Designator: 2DI150Z-100 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1000 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 150 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M210
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2DI150Z-100 Substitution
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2DI150Z-100 datasheet
FUJI POWER TRANSISTOR MODULE 2DI150A-120 (150A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANS... See More ⇒
Detailed specifications: 2DI100A-120, 2DI100D-050, 2DI100D-100, 2DI100Z-100, 2DI100Z-120, 2DI150A-120, 2DI150D-050, 2DI150D-100, D880, 2DI150Z-120, 2DI200A-050, 2DI200D-100, RN4993HFE, EMT1DXV6, 2DI50A-120, 2DI50D-050A, 2DI50D-100
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BJT Parameters and How They Relate
History: 155NU70 | 2SC1755C | 2SC1754 | 1401 | 2SC154C | MMBTA20 | MMBT9015-C
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