2DI200D-100 Specs and Replacement
Type Designator: 2DI200D-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1200 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M207
2DI200D-100 Substitution
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2DI200D-100 datasheet
Detailed specifications: 2DI100Z-100 , 2DI100Z-120 , 2DI150A-120 , 2DI150D-050 , 2DI150D-100 , 2DI150Z-100 , 2DI150Z-120 , 2DI200A-050 , 2N4401 , RN4993HFE , EMT1DXV6 , 2DI50A-120 , 2DI50D-050A , 2DI50D-100 , 2DI50M-050 , 2DI50M-120 , 2DI50Z-100 .
Keywords - 2DI200D-100 pdf specs
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