2DI50M-050 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI50M-050
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 310 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: M208
2DI50M-050 Transistor Equivalent Substitute - Cross-Reference Search
2DI50M-050 Datasheet (PDF)
3.1. 2di50m-120.pdf 
Size:108K _fuji
www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com
5.1. 2di50a-120.pdf Size:394K _fuji
FUJI POWER TRANSISTOR MODULE 2DI50A-120 (50A) 外形寸法:Outline Drawings 外形寸法: 外形寸法: 外形寸法: 外形寸法: パワートランジスタモジュール パワートランジスタモジュール パワートランジスタモジュール パワートランジスタモジュール パワートランジスタモジュール POWER TRANSISTOR MODULE POWER TRANSIS
5.2. 2di50d-100.pdf Size:69K _fuji
5.3. 2di50z-100.pdf Size:97K _fuji
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com
5.4. 2di50d-050a.pdf Size:98K _fuji
5.5. 2di50z-120.pdf Size:102K _fuji
Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .
