2DI50M-120 Specs and Replacement

Type Designator: 2DI50M-120

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 310 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 1200 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: M204

 2DI50M-120 Substitution

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2DI50M-120 datasheet

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2DI50M-120

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2DI50M-120

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2DI50M-120

FUJI POWER TRANSISTOR MODULE 2DI50A-120 (50A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANSIS... See More ⇒

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Detailed specifications: 2DI200A-050, 2DI200D-100, RN4993HFE, EMT1DXV6, 2DI50A-120, 2DI50D-050A, 2DI50D-100, 2DI50M-050, BC549, 2DI50Z-100, 2DI50Z-120, 2DI240A-055, 2DI300A-050, 2DI30A-120, 2DI30D-050A, 2DI30D-100, BC327-16BK

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