2DI50M-120 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI50M-120
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 310 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 1200 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: M204
2DI50M-120 Transistor Equivalent Substitute - Cross-Reference Search
2DI50M-120 Datasheet (PDF)
..1. Size:108K fuji
2di50m-120.pdf
2di50m-120.pdf
www.datasheet4u.comwww.datasheet4u.comwww.datasheet4u.comwww.datasheet4u.com
9.2. Size:394K fuji
2di50a-120.pdf
2di50a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI50A-120 (50A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
9.4. Size:97K fuji
2di50z-100.pdf
2di50z-100.pdf
For more information, contact:Collmer Semiconductor, Inc.P.O. Box 702708Dallas, TX 75370972-233-1589972-233-0481 Faxhttp://www.collmer.com
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
