2DI50Z-100 Specs and Replacement
Type Designator: 2DI50Z-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M204
2DI50Z-100 Substitution
- BJT ⓘ Cross-Reference Search
2DI50Z-100 datasheet
For more information, contact Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http //www.collmer.com ... See More ⇒
www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com ... See More ⇒
Detailed specifications: 2DI200D-100 , RN4993HFE , EMT1DXV6 , 2DI50A-120 , 2DI50D-050A , 2DI50D-100 , 2DI50M-050 , 2DI50M-120 , 2SC2240 , 2DI50Z-120 , 2DI240A-055 , 2DI300A-050 , 2DI30A-120 , 2DI30D-050A , 2DI30D-100 , BC327-16BK , BC327-25BK .
History: 104T2 | 185T2 | 16924
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