2DI50Z-120 PDF and Equivalents Search

 

2DI50Z-120 Specs and Replacement

   Type Designator: 2DI50Z-120
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 1200 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: M204
     - BJT ⓘ Cross-Reference Search