2DI30D-100 Specs and Replacement
Type Designator: 2DI30D-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M204
2DI30D-100 Substitution
- BJT ⓘ Cross-Reference Search
2DI30D-100 datasheet
FUJI POWER TRANSISTOR MODULE 2DI30D-100 (30A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANSIS... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
FUJI POWER TRANSISTOR MODULE 2DI30A-120 (30A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANSIS... See More ⇒
Detailed specifications: 2DI50M-050 , 2DI50M-120 , 2DI50Z-100 , 2DI50Z-120 , 2DI240A-055 , 2DI300A-050 , 2DI30A-120 , 2DI30D-050A , BC547B , BC327-16BK , BC327-25BK , BC327-40BK , BC328-16BK , BC328-25BK , BC328-40BK , BC477B , BC477DCSM .
History: 2G1027 | 2SB1216T-E | 2DI50D-100
Keywords - 2DI30D-100 pdf specs
2DI30D-100 cross reference
2DI30D-100 equivalent finder
2DI30D-100 pdf lookup
2DI30D-100 substitution
2DI30D-100 replacement
History: 2G1027 | 2SB1216T-E | 2DI50D-100
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