2DI30D-100 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI30D-100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M204
2DI30D-100 Transistor Equivalent Substitute - Cross-Reference Search
2DI30D-100 Datasheet (PDF)
..1. Size:356K fuji
2di30d-100.pdf
2di30d-100.pdf
FUJI POWER TRANSISTOR MODULE2DI30D-100 (30A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
9.1. Size:149K fuji
2di300a-050.pdf
2di300a-050.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
9.2. Size:400K fuji
2di30a-120.pdf
2di30a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI30A-120 (30A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
