BC55-10PA Datasheet, Equivalent, Cross Reference Search
Type Designator: BC55-10PA
SMD Transistor Code: BH
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.42 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: SOT1061
BC55-10PA Transistor Equivalent Substitute - Cross-Reference Search
BC55-10PA Datasheet (PDF)
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BCP55; BCX55; BC55PA60 V, 1 A NPN medium power transistorsRev. 8 24 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52BC55PA SOT1061
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BC54PAS; BC55PAS; BC56PAS45V/60V/80V, 1A NPN medium power transistorsRev. 1 11 November 2014 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.Table 1. Pro
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