2SA608S Datasheet. Specs and Replacement
Type Designator: 2SA608S 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92S
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2SA608S datasheet
RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM 300 mW (Tamb=25 ) 3. BASE Collector current ICM -100 mA 123 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ... See More ⇒
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒
Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter ... See More ⇒
Detailed specifications: BC55-10PA, BC55-16PA, BC55PA, BC55PAS, BC56-10PA, BC56-16PA, BC56PA, BC56PAS, BD777, 2SA727, 2SA733K, 2SA733LT1, 2SA733P, 2SA733Q, 2SA733R, 2SA830S, 2SA933AS
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