2SB0950 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB0950
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220FM
2SB0950 Transistor Equivalent Substitute - Cross-Reference Search
2SB0950 Datasheet (PDF)
2sb0950-a 2sb950-a.pdf
Power Transistors2SB0950 (2SB950), 2SB0950A (2SB950A)Silicon PNP epitaxial planar type darlingtonUnit: mmFor power amplification and switching10.00.2 4.20.2Complementary to 2SD1276 and 2SD1276A5.50.2 2.70.2 Features 3.10.1 High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with on
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .