KZT949 Specs and Replacement
Type Designator: KZT949
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 122 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT223
KZT949 Substitution
- BJT ⓘ Cross-Reference Search
KZT949 datasheet
SMD Type Transistors PNP Transistors FZT949 (KZT949) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-5.5A Collector Emitter Voltage VCEO=-30V Complementary to FZT849 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol R... See More ⇒
Detailed specifications: INA6001AC1 , INA6001AP1 , INA6002AC1 , INA6005AC1 , INA6005AP1 , INA6006AC1 , INA6006AP1 , INA6006AS1 , A1015 , KZT951 , KZT953 , INC1001AC1 , INC2001AC1 , INC2001AM1 , INC2001AU1 , HIT1577 , HLB121 .
History: 2SA885
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