HN1B01FDW1T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: HN1B01FDW1T1G
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT26 SOT457
HN1B01FDW1T1G Transistor Equivalent Substitute - Cross-Reference Search
HN1B01FDW1T1G Datasheet (PDF)
hn1b01fdw1t1g shn1b01fdw1t1g.pdf
HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorwww.onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: C S Prefix for Automoti
shn1b01fdw1t1g.pdf
HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorhttp://onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: CQ1 Q2 AEC-Q101 Qu
hn1b01fdw1t1-d.pdf
HN1B01FDW1T1Complementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mounthttp://onsemi.comFeatures(6) (5) (4) High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400Q1 Q2 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A- Machine Model: C(1) (2) (3) Pb-Free Package is AvailableMAXIMUM RATINGS (
hn1b01f.pdf
HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mmQ1: High voltage and high current : V = -50 V, I = -150 mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = -0.1 mA) / h (I = -2 mA) = 0.95 (typ.) FE C FE CQ2
hn1b01fu.pdf
HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mmQ1: High voltage and high current : V = -50V, I = -150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = -0.1mA) / h (I = -2mA) = 0.95 (typ.) FE C FE CQ2
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
