All Transistors. HN1B01FDW1T1G Datasheet

 

HN1B01FDW1T1G Datasheet and Replacement


   Type Designator: HN1B01FDW1T1G
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT26 SOT457
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HN1B01FDW1T1G Datasheet (PDF)

 ..1. Size:151K  onsemi
 hn1b01fdw1t1g shn1b01fdw1t1g.pdf pdf_icon

HN1B01FDW1T1G

HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorwww.onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: C S Prefix for Automoti

 0.1. Size:103K  onsemi
 shn1b01fdw1t1g.pdf pdf_icon

HN1B01FDW1T1G

HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorhttp://onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: CQ1 Q2 AEC-Q101 Qu

 2.1. Size:52K  onsemi
 hn1b01fdw1t1-d.pdf pdf_icon

HN1B01FDW1T1G

HN1B01FDW1T1Complementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mounthttp://onsemi.comFeatures(6) (5) (4) High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400Q1 Q2 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A- Machine Model: C(1) (2) (3) Pb-Free Package is AvailableMAXIMUM RATINGS (

 7.1. Size:367K  toshiba
 hn1b01f.pdf pdf_icon

HN1B01FDW1T1G

HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mmQ1: High voltage and high current : V = -50 V, I = -150 mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = -0.1 mA) / h (I = -2 mA) = 0.95 (typ.) FE C FE CQ2

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMBT3906HE3 | 2N2874 | 2N332A | 2SB744A | BC847RA | BDW24 | UN4222

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