HN1B01FDW1T1G Specs and Replacement

Type Designator: HN1B01FDW1T1G

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.38 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT26 SOT457

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HN1B01FDW1T1G datasheet

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HN1B01FDW1T1G

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C S Prefix for Automoti... See More ⇒

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HN1B01FDW1T1G

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http //onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C Q1 Q2 AEC-Q101 Qu... See More ⇒

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HN1B01FDW1T1G

HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http //onsemi.com Features (6) (5) (4) High Voltage and High Current VCEO = 50 V, IC = 200 mA High hFE hFE = 200X400 Q1 Q2 Moisture Sensitivity Level 1 ESD Rating - Human Body Model 3A - Machine Model C (1) (2) (3) Pb-Free Package is Available MAXIMUM RATINGS (... See More ⇒

 7.1. Size:367K  toshiba

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HN1B01FDW1T1G

HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit mm Q1 High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA) = 0.95 (typ.) FE C FE C Q2... See More ⇒

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Detailed specifications: KZT951, KZT953, INC1001AC1, INC2001AC1, INC2001AM1, INC2001AU1, HIT1577, HLB121, A1941, HN2E04F, HN4B101J, HN4B102J, HQ1A3M, HQ1A4A, HQ1F2Q, HQ1F3M, HQ1F3P

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