All Transistors. HQ1L2N Datasheet

 

HQ1L2N Datasheet, Equivalent, Cross Reference Search


   Type Designator: HQ1L2N
   SMD Transistor Code: DP
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 0.47 kOhm
   Built in Bias Resistor R2 = 1 kOhm

Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT89

 HQ1L2N Transistor Equivalent Substitute - Cross-Reference Search

   

HQ1L2N Datasheet (PDF)

 ..1. Size:283K  renesas
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HQ1L2N HQ1L2N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: HS5815 | HJ772 | AD103VI | C5T918 | CD1602

 

 
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