KZT649 Datasheet, Equivalent, Cross Reference Search
Type Designator: KZT649
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
KZT649 Transistor Equivalent Substitute - Cross-Reference Search
KZT649 Datasheet (PDF)
kzt649.pdf
SMD Type TransistorsNPN TransistorsFZT649 (KZT649)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=25V1 2 3 Low saturation voltage0.2502.30 (typ) Complementary to FZT749Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .