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KZT649 Specs and Replacement


   Type Designator: KZT649
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT223
 

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KZT649 datasheet

 ..1. Size:792K  kexin
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KZT649

SMD Type Transistors NPN Transistors FZT649 (KZT649) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=25V 1 2 3 Low saturation voltage 0.250 2.30 (typ) Complementary to FZT749 Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = ... See More ⇒

Detailed specifications: HR1A3M , HR1A4A , HR1A4M , HR1F2Q , HR1F3P , HR1L2Q , HR1L3N , KZT591 , TIP35C , KZT749 , KZT789A , KZT849 , KZT851 , KZT853 , ISC3581AS1 , ISC4356AS1 , ISC6046AU1 .

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