ISA1989AU1 Datasheet, Equivalent, Cross Reference Search
Type Designator: ISA1989AU1
SMD Transistor Code: TR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT416
ISA1989AU1 Transistor Equivalent Substitute - Cross-Reference Search
ISA1989AU1 Datasheet (PDF)
isa1995as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1995AS1 FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPE(FRAME TYPE)DESCRIPTION OUTLINE DRAWING Unit ISA1995AS1 is mini package resin sealed 4.0 silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . 0.1 0.45 FEATURE Small collector to emitter saturation voltage. 2.5 2
isa1993as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1993AS1 FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPE(FRAME TYPE)DESCRIPTION OUTLINE DRAWING Unit ISA1993AS1 is mini package resin sealed 4.0 silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . 0.1 0.45 FEATURE Small collector to emitter saturation voltage. 2.5 2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3717
