IMB3AFRA Datasheet, Equivalent, Cross Reference Search
Type Designator: IMB3AFRA
SMD Transistor Code: B3
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC74
IMB3AFRA Transistor Equivalent Substitute - Cross-Reference Search
IMB3AFRA Datasheet (PDF)
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EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit : mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB31.60.5package. 1.00.5 0.52) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 1pin mark ( ) ( ) ( )1 2 33) Transistor elements are indep
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TransistorsGeneral purpose(dual digital transistors)UMB3N / IMB3AFFeatures FExternal dimensions (Units: mm)1) Two DTA143T chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.FStructureDual PNP digital transistor(each with single built in resistor)The follow
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