IMD2AFRA Datasheet, Equivalent, Cross Reference Search
Type Designator: IMD2AFRA
SMD Transistor Code: D2
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SC74
IMD2AFRA Transistor Equivalent Substitute - Cross-Reference Search
IMD2AFRA Datasheet (PDF)
emd2fha umd2nfha imd2afra.pdf
EMD2FHA / UMD2NFHA / IMD2AFRAEMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R122kWEMD2UMD2NEMD2FHA UMD2NFHA(SC-107C)R2 SOT-353 (SC-88)22kWSMT6(4)
emd2 umd2n imd2a.pdf
EMD2 / UMD2N / IMD2A Transistors General purpose (dual digital transistors) EMD2 / UMD2N / IMD2A Features Dimensions (Unit : mm) 1) Both the DTA124E chip and DTC124E chip in a EMT EMD2or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interferen
umd2n imd2a d2 sot23-6sot363.pdf
TransistorsGeneral purpose(dual digital transistors)UMD2N / IMD2AFFeatures FExternal dimensions (Units: mm)1) Both the DTA124E chip andDTC124E chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
