IMH6AFRA Datasheet. Specs and Replacement

Type Designator: IMH6AFRA  📄📄 

SMD Transistor Code: H6

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC74

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IMH6AFRA datasheet

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IMH6AFRA

EMH6FHA / UMH6NFHA / IMH6AFRA EMH6 / UMH6N / IMH6A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC 50V (5) (4) (4) (1) (1) IC(MAX.) 100mA (2) (2) (3) (3) R1 47kW EMH6 UMH6N EMH6FHA UMH6NFHA R2 47kW (SC-107C) SOT-353 (SC-88) SMT6 ... See More ⇒

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IMH6AFRA

(94S-846-A144 ... See More ⇒

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IMH6AFRA

EMH6 / UMH6N / IMH6A Transistors General purpose (dual digital transistors) EMH6 / UMH6N / IMH6A External dimensions (Unit mm) Features 1) Two DTC144E chips in a EMT or UMT or SMT EMH6 package. ( ) ( ) 4 3 ( ) ( ) 5 2 ( ) ( ) 6 1 1.2 Equivalent circuit 1.6 EMH6 / UMH6N IMH6A (3) (2) (1) (4) (5) (6) R1 R1 ROHM EMT6 Each lead has same dimensions R2 R2 R2 R2 ... See More ⇒

Detailed specifications: INC6005AC1, INC6005AP1, INC6006AC1, INC6006AP1, INC6006AS1, INC6007AP1, INC6008AC1, INC6008AP1, BC557, IMH8AFRA, IMH9AFRA, IMT18, IMT1AFRA, IMT2AFRA, IMT3AFRA, IMT4FRA, IMX25

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