IMH6AFRA Datasheet, Equivalent, Cross Reference Search
Type Designator: IMH6AFRA
SMD Transistor Code: H6
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SC74
IMH6AFRA Transistor Equivalent Substitute - Cross-Reference Search
IMH6AFRA Datasheet (PDF)
emh6fha umh6nfha imh6afra.pdf
EMH6FHA / UMH6NFHA / IMH6AFRAEMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N EMH6FHA UMH6NFHAR247kW (SC-107C) SOT-353 (SC-88) SMT6
emh6 umh6n imh6a.pdf
EMH6 / UMH6N / IMH6A Transistors General purpose (dual digital transistors) EMH6 / UMH6N / IMH6A External dimensions (Unit : mm) Features 1) Two DTC144E chips in a EMT or UMT or SMT EMH6 package. ( ) ( )4 3( ) ( )5 2( ) ( )6 11.2 Equivalent circuit 1.6EMH6 / UMH6N IMH6A(3) (2) (1) (4) (5) (6)R1 R1ROHM : EMT6 Each lead has same dimensionsR2 R2 R2 R2
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
