INC5002AP1
Datasheet, Equivalent, Cross Reference Search
Type Designator: INC5002AP1
SMD Transistor Code: BB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 15
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT89
INC5002AP1
Transistor Equivalent Substitute - Cross-Reference Search
INC5002AP1
Datasheet (PDF)
..1. Size:128K isahaya
inc5002ap1.pdf
INC5002AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=3A Low VCE(sat) VCEsat=0.6V m
8.2. Size:230K isahaya
inc5004ac1.pdf
INC5004AC1 PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini
8.3. Size:109K isahaya
inc5004ap1.pdf
INC5004AP1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin
8.4. Size:137K isahaya
inc5006ac1.pdf
INC5006AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5006AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
8.5. Size:136K isahaya
inc5001ap1.pdf
INC5001AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=1A Low VCE(sat) VCEsat=0.25V
8.6. Size:132K isahaya
inc5003ah1.pdf
PRELIMINARY INC5003AH1 NoticeThis is not a final specification Some parametric are subject to change. SILICON NPN EPITAXIAL TYPEFEATURE OUTLINE DRAWING UNIT Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A 6.602.30Complementary INA5003AH1 5.340.50APPLICATION Motor drive, IGBT drive, DC/DC convertor 1 2 30.127
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