All Transistors. INC5002AP1 Datasheet

 

INC5002AP1 Datasheet and Replacement


   Type Designator: INC5002AP1
   SMD Transistor Code: BB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

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INC5002AP1 Datasheet (PDF)

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INC5002AP1

INC5002AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=3A Low VCE(sat) VCEsat=0.6V m

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INC5002AP1

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INC5002AP1

INC5004AC1 PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini

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INC5002AP1

INC5004AP1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin

Datasheet: IMT1AFRA , IMT2AFRA , IMT3AFRA , IMT4FRA , IMX25 , IMX2FRA , INC5001AC1 , INC5001AP1 , BC327 , INC5003AH1 , INC5004AC1 , INC5004AP1 , INC5006AC1 , IMX3FRA , IMX8FRA , IMZ1AFRA , IMZ2AFRA .

History: DTA114WSA | BF186

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