KXT5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: KXT5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
KXT5401 Transistor Equivalent Substitute - Cross-Reference Search
KXT5401 Datasheet (PDF)
..1. Size:50K tysemi
kxt5401.pdf
kxt5401.pdf
SMD Type TransistorsProduct specificationKXT5401 (CXT5401)SOT-89 Unit: mm+0.14.50+0.1 1.50-0.1-0.11.80+0.1-0.1FeaturesHigh current (max. 500mA).Low voltage (max. 150 V).+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollect
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
