TTB1020B Datasheet and Replacement
Type Designator: TTB1020B
SMD Transistor Code: B1020B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220SIS
TTB1020B Transistor Equivalent Substitute - Cross-Reference Search
TTB1020B Datasheet (PDF)
ttb1020b.pdf
TTB1020B Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B TTB1020B TTB1020B 1. Applications 1. Applications 1. Applications 1. Applications High-Current Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage VCE(sat) =... See More ⇒
ttb1067b.pdf
TTB1067B PNP ( ) TTB1067B TTB1067B TTB1067B TTB1067B 1. 1. 1. 1. 2. 2. 2. 2. (1) ... See More ⇒
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TTB105N06A,TTP105N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 105A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
ttb105n08a ttp105n08a.pdf
TTB105N08A,TTP105N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 85V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V) ... See More ⇒
Datasheet: KZT1048A , KZT1049A , KTC9012SC , TTA005 , TTA006B , TTA008B , TTA009 , TTA1452B , BC639 , TTB1067B , KTC143ZKA , KTC2316 , KTC9013SC , KTC9014SC , KTC9015SC , KTD1304S , KTA1297 .
History: KRC653U | UN6219 | KF2000 | AC552 | MT0493 | SUR538J | KRC661E
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History: KRC653U | UN6219 | KF2000 | AC552 | MT0493 | SUR538J | KRC661E
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