TTB1020B Datasheet, Equivalent, Cross Reference Search
Type Designator: TTB1020B
SMD Transistor Code: B1020B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220SIS
TTB1020B Transistor Equivalent Substitute - Cross-Reference Search
TTB1020B Datasheet (PDF)
ttb1020b.pdf
TTB1020BBipolar Transistors Silicon PNP Triple-Diffused TypeTTB1020BTTB1020BTTB1020BTTB1020B1. Applications1. Applications1. Applications1. Applications High-Current Switching Hammer Drivers2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A)(2) Low collector-emitter saturation voltage: VCE(sat) =
ttb1067b.pdf
TTB1067B PNP ()TTB1067BTTB1067BTTB1067BTTB1067B1. 1. 1. 1. 2. 2. 2. 2. (1)
ttb105n06a ttp105n06a.pdf
TTB105N06A,TTP105N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 105A Low Gate Charge RDS(ON) (at VGS =10V)
ttb105n08a ttp105n08a.pdf
TTB105N08A,TTP105N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 85V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2251
