TTB1067B Specs and Replacement
Type Designator: TTB1067B
SMD Transistor Code: B1067B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO126N
TTB1067B Substitution
- BJT ⓘ Cross-Reference Search
TTB1067B datasheet
TTB1067B PNP ( ) TTB1067B TTB1067B TTB1067B TTB1067B 1. 1. 1. 1. 2. 2. 2. 2. (1) ... See More ⇒
TTB1020B Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B TTB1020B TTB1020B 1. Applications 1. Applications 1. Applications 1. Applications High-Current Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage VCE(sat) =... See More ⇒
TTB105N06A,TTP105N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 105A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
TTB105N08A,TTP105N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 85V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: KZT1049A, KTC9012SC, TTA005, TTA006B, TTA008B, TTA009, TTA1452B, TTB1020B, 2SD669, KTC143ZKA, KTC2316, KTC9013SC, KTC9014SC, KTC9015SC, KTD1304S, KTA1297, KTA143ZKA
Keywords - TTB1067B pdf specs
TTB1067B cross reference
TTB1067B equivalent finder
TTB1067B pdf lookup
TTB1067B substitution
TTB1067B replacement
