All Transistors. KTC3199-Y Datasheet

 

KTC3199-Y Datasheet and Replacement


   Type Designator: KTC3199-Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92S

 KTC3199-Y Transistor Equivalent Substitute - Cross-Reference Search

   

KTC3199-Y Datasheet (PDF)

 6.1. Size:557K  mcc
ktc3199-bl-gr-o-y.pdf pdf_icon

KTC3199-Y

KTC3199-O MCC Micro Commercial Components TM KTC3199-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3199-GR Phone (818) 701-4933 Fax (818) 701-4939 KTC3199-BL Features High DC Current Gain hFE=70 700 NPN General Excellent hFE Linearity hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise NF=1.0dB(Typ.), 10dB(Max.) Purpose Application Compl... See More ⇒

 7.1. Size:562K  jiangsu
ktc3199.pdf pdf_icon

KTC3199-Y

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTC3199 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Complementary to KTA1267 1 2 3 Equivalent Circuit C3199 C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM... See More ⇒

 7.2. Size:78K  kec
ktc3199.pdf pdf_icon

KTC3199-Y

SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES High DC Current Gain hFE=70 700. Excellent hFE Linearity DIM MILLIMETERS O A 3.20 MAX hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H M B 4.30 MAX C 0.55 MAX Low Noise NF=1dB(Typ.), 10dB(Max.). _ D 2.40 + 0.15 E 1.27 Complementary to KTA1267. F 2.30 ... See More ⇒

 7.3. Size:60K  kec
ktc3199l.pdf pdf_icon

KTC3199-Y

SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B High DC Current Gain hFE=70 700. Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise NF=0.2dB(Typ.), 3dB(Max.). H M B 4.30 MAX C 0.55 MAX Complementary to KTA1267L. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + ... See More ⇒

Datasheet: TFS4083 , TFS5095 , KTA2014-GR , KTA2014-O , KTA2014-Y , KTC3199-BL , KTC3199-GR , KTC3199-O , D882 , KTC3205-O , KTC3205-Y , KTC3880LT1 , TPA2029NND03 , TPA2030NND03 , TPC2715NND03 , TPC5658NND03 , TPC5663NND03 .

History: RN2972HFE | BFQ88B | L9012SLT3G

Keywords - KTC3199-Y transistor datasheet

 KTC3199-Y cross reference
 KTC3199-Y equivalent finder
 KTC3199-Y lookup
 KTC3199-Y substitution
 KTC3199-Y replacement

 

 
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