All Transistors. TTC3710B Datasheet

 

TTC3710B Datasheet and Replacement


   Type Designator: TTC3710B
   SMD Transistor Code: C3710B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 220 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220SIS
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TTC3710B Datasheet (PDF)

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TTC3710B

TTC3710BBipolar Transistors Silicon NPN Epitaxial TypeTTC3710BTTC3710BTTC3710BTTC3710B1. Applications1. Applications1. Applications1. Applications High-Current Switching2. Features2. Features2. Features2. Features(1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A)(2) High speed switching: tstg = 1 s (typ.)(3) Comple

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