TFN1037 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN1037
SMD Transistor Code: A4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
TFN1037 Transistor Equivalent Substitute - Cross-Reference Search
TFN1037 Datasheet (PDF)
tfn1037.pdf
Tin Far Electronic CO.,LTDPage No: 1/4TFN1037 50V 150mA PNP TRANSISTOR Description The TFN1037 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent hFE linearity Complementary to TFN2412. Equivalent CircuitTFN1037 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol
tfn1036.pdf
Tin Far Electronic CO.,LTDPage No: 1/6TFN1036 Description The TFN1036 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. Complementary to TFN2411. Pb-free package Symbol Outline TFN1036 SOT-23 BBase CCollector EEmitter Absolute
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
