TFN1386L Specs and Replacement

Type Designator: TFN1386L

SMD Transistor Code: BH

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

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TFN1386L datasheet

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TFN1386L

Tin Far Electronic CO.,LTD Page No 1/4 TFN1386L Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Complementary to TFN2098L Symbol Outline TFN1386L SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -20 V Col... See More ⇒

Detailed specifications: TTC5460B, TTD1409B, TTD1410B, TTD1415B, TTD1509B, TFM1759, TFN1036, TFN1037, TIP2955, TFN1424, TFN1514, TFN1590, TFN1721, TFN1759, TFN1768, TSC5301DCT, TSC5302DCH

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