All Transistors. TFN1386L Datasheet

 

TFN1386L Datasheet and Replacement


   Type Designator: TFN1386L
   SMD Transistor Code: BH
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
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TFN1386L Datasheet (PDF)

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TFN1386L

Tin Far Electronic CO.,LTDPage No: 1/4TFN1386L Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Complementary to TFN2098L Symbol OutlineTFN1386L SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C)Parameter Symbol Limits Unit Collector-Base Voltage VCBO -20 V Col

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KTB2510 | 2SA3802 | D29E2 | 2N4131 | BDS28A | 2SD56 | BFQ23C

Keywords - TFN1386L transistor datasheet

 TFN1386L cross reference
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