TFN1386L Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN1386L
SMD Transistor Code: BH
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
TFN1386L Transistor Equivalent Substitute - Cross-Reference Search
TFN1386L Datasheet (PDF)
..1. Size:157K tinfar
tfn1386l.pdf
tfn1386l.pdf
Tin Far Electronic CO.,LTDPage No: 1/4TFN1386L Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Complementary to TFN2098L Symbol OutlineTFN1386L SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C)Parameter Symbol Limits Unit Collector-Base Voltage VCBO -20 V Col
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
