TFN1759 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN1759
SMD Transistor Code: 4Z
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
TFN1759 Transistor Equivalent Substitute - Cross-Reference Search
TFN1759 Datasheet (PDF)
tfn1759.pdf
Tin Far Electronic CO.,LTD Page No: 1/4 TFN1759 Description High breakdown voltage. (BV =-400V)CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA.CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505N3. Symbol OutlineTFN1759 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol L
tfn1768.pdf
Tin Far Electronic CO.,LTDPage No: 1/6TFN1768 Description The TFN1768 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (min.)CEO High collector current, I =1A (DC)C(max) Pb-free package Symbol Outline SOT-23 TFN1768BBaseC
tfn1721.pdf
Tin Far Electronic CO.,LTDPage No: 1/6TFN1721 Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free package Symbol OutlineTFN1721 SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -300 VCollector-Emitter Voltage V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
