TFN4061 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN4061
SMD Transistor Code: 1D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
TFN4061 Transistor Equivalent Substitute - Cross-Reference Search
TFN4061 Datasheet (PDF)
..1. Size:339K tinfar
tfn4061.pdf
tfn4061.pdf
Tin Far Electronic CO.,LTD Page No: 1/5 TFN4061 Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free package. Symbol OutlineTFN4061 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
